9.50-10.50 GHz 12-Watt Internally Matched Power FET
www.DataSheet4U.com
EID0910A1-12
UPDATED 07/12/2007
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Excelics
EID09...
Description
www.DataSheet4U.com
EID0910A1-12
UPDATED 07/12/2007
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Excelics
EID0910A1-12
.827±.010 .669
.120 MIN
FEATURES
9.50– 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.120 MIN
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 9.50-10.50GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 9.50-10.50GHz
Caution! ESD sensitive device. MIN
40 7.0
TYP
41 8.0
MAX
UNITS
dBm dB
±0.6 28 3800 6400 -1.2 2.5 4300 8000 -2.5 3.0
o
dB % mA mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 64 mA
Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
VDS VGS IDS IGSF PIN PT TCH TSTG
Notes:
CHARACTERISTIC
Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power...
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