EID1112A1-8

www.DataSheet4U.com EID1112A1-8 UPDATED 07/12/2007 11.70-12.70 GHz 8-Watt Internally Matched Power FET Excelics EID1112A1-8 .827±.010 .669 .120 MIN FEATURES 11.70-12.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 1 Caution! ESD sensitive device. MIN 38.5 7.0 TYP 39.5 8.0 ±0.6 35 2800 4400 -1.2 3.5 3200 5200 -2.5 4.0 o MAX UNITS dBm dB dB % mA mA V C/W P1dB G1dB ∆G PAE Id1dB IDSS VP RTH f = 11.70-12.70GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate C...