EID1314A1-12

www.DataSheet4U.com EID1314A1-12 UPDATED: 07/12/2007 13.75–14.50 GHz 12-Watt Internally Matched Power FET Excelics EID1314A1-12 .827±.010 .669 .120 MIN FEATURES 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Caution! ESD sensitive device. MIN 40.0 5.0 TYP 41.0 6.0 ±0.6 23 3960 5900 -1.2 2.5 5100 8200 -2.5 3.5 o P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 14.40-15.35GHz MAX UNITS dBm dB dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 64 mA Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate ...