EID1616-3

www.DataSheet4U.com EID1616-3 UPDATED: 07/24/2008 16.2–16.5 GHz 3-Watt Internally-Matched Power FET FEATURES 16.2-16.5 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +35.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EID1616-3 .060 MIN. .650±.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Gain Flatness f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Power Added Efficiency at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ ≈ 1200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device. MIN 34.5 5.0 TYP 35.0 6.0 ±0.6 25 700 1100 -2.5 8.5 900 1500 -4.0 10.5 o MAX UNITS dBm dB dB % mA mA V C/W P1dB G1dB ∆G PAE Id1dB IDSS VP RTH f = 16.2-16.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power...