EID1718A1-4

www.DataSheet4U.com EID1718A1-4 UPDATED: 07/12/2007 17.3–18.1 GHz 4-Watt Internally-Matched Power FET FEATURES 17.3-18.1 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EID1718A1-4 .060 MIN. .650±.008 .512 GATE .319 DRAIN YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 17.3-18.1GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB Compression f = 17.3-18.1GHz VDS = 10 V, IDSQ ≈ 1200mA Gain Flatness f = 17.3-18.1GHz VDS = 10 V, IDSQ ≈ 1200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1200mA f = 17.3-18.1GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device. MIN 35.5 5.0 TYP 36.0 6.0 ±0.6 25 1300 2080 -2.5 4.5 1800 2880 -4.0 5.5 o MAX UNITS dBm dB dB % mA mA V C/W P1dB G1dB ∆G PAE Id1dB IDSS VP RTH f = 17.3-18.1GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Po...