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2SK3994
TOSHIBA Field-Effect Transistor
Silicon N-Channel MOS Type (π−MOS V)
2SK3994
Switching Regulator, DC/DC Converter Applications Motor Drive Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 90 mΩ (typ.) : |Yfs| = 10 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 250 V) : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±30 20 80 45 487 20 4.5 150 −55~150 Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
— SC-67 2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 2.78 62.5 Unit °C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.06 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3994
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 200 V, VGS = 10 V, ID = 20 A Duty < = 1%, tw = 10 μs VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min — ±30 — 250 3.0 — 5 — — — Typ. — — — — — 90 10 2090 280 1000 20 Max ±10 — 100 — 5.0 105 — — — — — pF Unit μA V μA V V mΩ S
Switching time Fall time
4.7 Ω
Turn-on time
RL = 12.5Ω
VGS 10 V 0V
ID = 10 A
—
VOUT
— 40 — ns — 10 —
VDD ∼ − 125 V
Turn-off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge
— — — —
40 45 22 23
— — — — nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / μs Min — — — — — Typ. — — — 320 2.8 Max 20 80 −1.5 — — Unit A A V ns μC
Marking
Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3994
Part No. (or abbreviation code) Lot No. Please contact your TOSHIBA sales representative for details as to Note
environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SK3994
ID – VDS
50 Common source Tc = 25°C 40 Pulse test 9 30 15 10 100 9.5 Common source Tc = 25°C 80 Pulse test
ID – VDS
15
12 11
Drain current ID (A)
Drain current ID (A)
8.5
60
10
20
8 7.5
40
9
10
VGS = 7 V
20
8 VGS = 7 V
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Drain−source voltage
VDS (V)
Drain−source voltage
VDS (V)
ID – VGS
50 Common source 40 VDS = 10 V Pulse test 5
VDS – VGS
Common source Tc = 25°C 4 Pulse test
Drain current ID (A)
Tc = −55°C 20 100 10 25 0 0
Drain−source voltage
30
VDS (V)
3
2
ID = 20 A
1
10 5
4
8
12
16
20
0 0
4
8
12
16
20
Gate−source voltage
VGS (V)
Gate−source voltage
VGS (V)
⎪Yfs⎪ – ID
100 Common source 1 VDS = 10 V Pulse test Common source Tc = 25°C Pulse test
RDS (ON) – ID
Forward transfer admittance ⎪Yfs⎪
(S)
10 Tc = −55°C 100 25
.