DMG4712SSS

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features  High Density UMOS with Schottky Barrier Diode  Low Leakage Current at High Temperature  High Conversion Efficiency  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency  UIS Tested, RG Tested  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) Schottky Integrated MOSFET Pin1 Top View SO-8 S D S D S D G D Top View Pin Configuration D G S DIOFET Ordering Information (Note 4) Notes: Part Number Case Packaging DMG4712SSS-13 SO-8 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "G...