Document
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP2035UQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
DMP2035U
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.009 grams (Approximate)
NEW PRODUCT
YM
D
SOT23 (Standard)
G
D
ESD PROTECTED
Top View
Gate Protection Diode
S
Internal Schematic
G
S
Top View
Ordering Information (Notes 4 & 5)
Notes:
Part Number DMP2035U-7 DMP2035UQ-7 DMP2035U-13
Compliance Standard Automotive Standard
Case SOT23 (Standard) SOT23 (Standard) SOT23 (Standard)
Packaging 3,000 / 7” Tape & Reel 3,000 / 7” Tape & Reel 10,000 / 13” Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating (given on page 2) can be applied.
Marking Information
Date Code Key Year Code
Month Code
MP3
MP3 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September)
2011 Y
Jan 1
…
2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
…
I
J
K
L
M
N
O
P
R
S
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
2
3
4
5
6
7
8
9
O
N
D
DMP2035U
Document number: DS31830 Rev. 10 - 2
1 of 7 www.diodes.com
July 2021
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 8) VGS = -4.5V
Steady State
Pulsed Drain Current (Note 8)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (Note 10)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM IS ISM
DMP2035U
Value
Unit
-20
V
±10
V
-4.9 -4.0
A
-24
A
-1.2
A
-24
A
NEW PRODUCT
Thermal Characteristics
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Operating and Storage Temperature Range
Symbol PD RθJA PD RθJA
TJ, TSTG
Value 0.81 153.5 1.2 100 -55 to +150
Unit W °C/W W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
-20
—
—
IDSS
—
—
-1.0
IGSS
—
—
±10
VGS(TH)
-0.4
-0.7
-1.0
23
35
RDS(ON)
—
30
45
41
62
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
|YFS| VSD
Ciss Coss Crss Rg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF
—
14
—
—
-0.7 -1.0
— 1,610 —
—
157
—
—
145
—
—
9.45
—
—
15.4
—
—
2.5
—
—
3.3
—
—
16.8
—
—
12.4
—
—
94.1
—
—
42.4
—
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate. 8. Repetitive rating, pulse width limited by junction temperature. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA μA VDS = -20V, VGS = 0V μA VGS = ±8V, VDS = 0V
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
mΩ VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
s
VDS = -5V, ID = -4A
V
VGS = 0V, IS = .