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DMP2035U Dataheets PDF



Part Number DMP2035U
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP2035U DatasheetDMP2035U Datasheet (PDF)

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMP2035UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ DMP2035U P-CHANNEL ENHANCEM.

  DMP2035U   DMP2035U



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Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMP2035UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram Below  Weight: 0.009 grams (Approximate) NEW PRODUCT YM D SOT23 (Standard) G D ESD PROTECTED Top View Gate Protection Diode S Internal Schematic G S Top View Ordering Information (Notes 4 & 5) Notes: Part Number DMP2035U-7 DMP2035UQ-7 DMP2035U-13 Compliance Standard Automotive Standard Case SOT23 (Standard) SOT23 (Standard) SOT23 (Standard) Packaging 3,000 / 7” Tape & Reel 3,000 / 7” Tape & Reel 10,000 / 13” Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 5. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating (given on page 2) can be applied. Marking Information Date Code Key Year Code Month Code MP3 MP3 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September) 2011 Y Jan 1 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 … I J K L M N O P R S Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2 3 4 5 6 7 8 9 O N D DMP2035U Document number: DS31830 Rev. 10 - 2 1 of 7 www.diodes.com July 2021 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 8) VGS = -4.5V Steady State Pulsed Drain Current (Note 8) Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Body Diode Forward Current (Note 10) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IDM IS ISM DMP2035U Value Unit -20 V ±10 V -4.9 -4.0 A -24 A -1.2 A -24 A NEW PRODUCT Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 0.81 153.5 1.2 100 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max BVDSS -20 — — IDSS — — -1.0 IGSS — — ±10 VGS(TH) -0.4 -0.7 -1.0 23 35 RDS(ON) — 30 45 41 62 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |YFS| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — 14 — — -0.7 -1.0 — 1,610 — — 157 — — 145 — — 9.45 — — 15.4 — — 2.5 — — 3.3 — — 16.8 — — 12.4 — — 94.1 — — 42.4 — Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate. 8. Repetitive rating, pulse width limited by junction temperature. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. Unit Test Condition V VGS = 0V, ID = -250μA μA VDS = -20V, VGS = 0V μA VGS = ±8V, VDS = 0V V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A mΩ VGS = -2.5V, ID = -4.0A VGS = -1.8V, ID = -2.0A s VDS = -5V, ID = -4A V VGS = 0V, IS = .


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