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AOB430 Dataheets PDF



Part Number AOB430
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel FET
Datasheet AOB430 DatasheetAOB430 Datasheet (PDF)

www.DataSheet4U.com AOB430 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS & Sony 259 specifications). AOB430L is a Green Product ordering option. AOB430 and AOB430L are electrically identical. Feat.

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www.DataSheet4U.com AOB430 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS & Sony 259 specifications). AOB430L is a Green Product ordering option. AOB430 and AOB430L are electrically identical. Features VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 mΩ (VGS =10V) RDS(ON) < 85 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 60 ±20 12 12 30 12 23 50 25 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11.2 50 2.5 Max 13.5 60 3 Units °C/W °C/W °C/W Alpha Omega Semiconductor, Ltd. AOB430 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 30 53 95 60 14 0.74 1 12 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 61 27 1.35 7.5 VGS=10V, VDS=30V, ID=12A 3.8 1.2 1.9 4.2 VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω IF=12A, dI/dt=100A/µs 3.4 16 2 27.6 30 35 2 10 5 540 85 63 2.2 Min 60 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:Aug 2005 Alpha & Omega Semiconductor, Ltd. AOB430 www.DataSheet4U.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 7V 6V 5V ID(A) 20 VDS=5V 15 4.5V 4V 3.5V VGS=3V 4 5 10 125°C 25°C 5 0 2 2.5 3 3.5 4 4.5 5 VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 VGS(Volts) Figure 2: Transfer Characteristics 70 RDS(ON) (mΩ) VGS=6V VGS=10V 50 VGS=10V, 12A 60 VGS=4.5V,6A 40 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 ID=12A RDS(ON) (mΩ).


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