AOB436

www.DataSheet4U.com AOB436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB436L is a Green Product ordering option. AOB436 and AOB436L are electrically identical. TO-263 D2-PAK Features VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 55 150 30 45 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 10 41 1.9 Max 15 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOB436 www.DataSheet4U.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VD...