N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
3N80
3.0 Amps, 800Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 provide excelle...
Description
UNISONIC TECHNOLOGIES CO., LTD
3N80
3.0 Amps, 800Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TF2-T
3N80G-TF2-T
3N80L-TM3-T
3N80G-TM3-T
3N80L-TMS4-R
3N80G-TMS4-R
3N80L-TN3-R
3N80G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S4 TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tape Reel Tape Reel
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-283.J
3N80
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-283.J
3N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS 800 V
Drain-Gate Voltage (RG=20kΩ) Gate-Source Voltage
VDGR VGSS
800 ±30
V V
Gate-Source Breakdown Voltage (IGS=±1mA) Insulation Withstand Voltage (DC...
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