HEXFET Power MOSFET
PD -97450 www.DataSheet4U.com
IRFH5004PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 2.6 73 1.2 100
V mΩ n...
Description
PD -97450 www.DataSheet4U.com
IRFH5004PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 2.6 73 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits
Features and Benefits
Features
Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH5004TRPBF IRFH5004TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel
Note
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ±20 28 23 100 100 400 3.6 250 0.029 -55 to + 150 Units V
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