HEXFET Power MOSFET
PD -96294 www.DataSheet4U.com
IRFH5110PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
100 12.4 48 1.5 63
V mΩ ...
Description
PD -96294 www.DataSheet4U.com
IRFH5110PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
100 12.4 48 1.5 63
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
Features and Benefits
Features Benefits
Low RDSon (< 12.4 mΩ) Low Thermal Resistance to PCB (< 1.1°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH5110TRPBF IRFH5110TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ± 20 11 9.0 63 40 252 3.6 114 0.029 -55 to + 150 Units V
A
g g
c
W W/°C °C
Linear Der...
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