IRFH5406PBF

PD -96299 www.DataSheet4U.com IRFH5406PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 14.4 23 1.1 40 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 14.4 mΩ) Low Thermal Resistance to PCB (< 2.7°C/W) 100% Rg tested Low Profile (<0.9 mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5406TRPBF IRFH5406TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 ± 20 11 9 40 25 160 3.6 46 0.029 -55 to + 150 Units V A g...