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BGA2815

NXP

MMIC Wideband Amplifier

BGA2815 MMIC wideband amplifier Rev. 5 — 29 May 2015 Product data sheet 1. Product profile 1.1 General description Si...


NXP

BGA2815

File Download Download BGA2815 Datasheet


Description
BGA2815 MMIC wideband amplifier Rev. 5 — 29 May 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits  Input internally matched to 50   A gain of 25.8 dB at 250 MHz decreasing to 24.7 dB at 2150 MHz  Output power at 1 dB gain compression = 6 dBm  Supply current = 18.2 mA at a supply voltage of 3.3 V  Reverse isolation > 38 dB up to 2 GHz  Good linearity with low second order and third order products  Noise figure = 3.8 dB at 950 MHz  Unconditionally stable (K > 1)  No output inductor required 1.3 Applications  LNB IF amplifiers  General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol        V\P NXP Semiconductors BGA2815 MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description BGA2815 - plastic surface-mounted package; 6 leads Version SOT363 4. Marking Table 3. Marking Type number BGA2815 Marking code *E9 Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ...




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