Document
A Product Line of Diodes Incorporated www.DataSheet4U.com
DMN6066SSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V(BR)DSS RDS(on) 66mΩ @ VGS= 10V 60V 97mΩ @ VGS= 4.5V ID TA = 25°C 5.0A 4.1A
Features and Benefits
• • • • Low on-resistance Fast switching speed “Green” component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data Description and Applications
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Motor control Backlighting DC-DC Converters Power management functions • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate)
SO-8
D
G S
Top View Top View Equivalent Circuit
Ordering Information
Product DMN6066SSS-13
Note:
(Note 1) Marking N6066SS Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N6066SS YY WW
= Manufacturer’s Marking N6066SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53)
DMN6066SSS
Document Number DS32110 Rev 1 - 2
1 of 8 www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated www.DataSheet4U.com
DMN6066SSS
ADVANCE INFORMATION
Maximum Ratings
Drain-Source voltage Gate-Source voltage Continuous Drain current
@TA = 25°C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value 60 ±20 5.0 4.0 3.7 23 4.0 23 Unit V V A A A A
Characteristic (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5)
VGS = 10V
Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode)
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
Notes:
Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 6) RθJA RθJL TJ, TSTG
Value 1.56 12.5 2.81 22.5 80.0 44.5 37.0 -55 to 150
Unit W mW/°C
°C/W °C
2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN6066SSS
Document Number DS32110 Rev 1 - 2
2 of 8 www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated www.DataSheet4U.com
DMN6066SSS
ADVANCE INFORMATION
Thermal Characteristics
1.6 10
Max Power Dissipation (W)
RDS(on) Limited
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80
ID Drain Current (A)
25mm x 25mm 1oz FR4
1
DC 1s 100ms 10ms Single Pulse T amb=25°C 1ms 100µs
100m 10m 1m 100m
VDS Drain-Source Voltage (V)
1
10
100 120 140 160
Temperature (°C)
Safe Operating Area
80 70 60 50 40 30 20 10 0 100µ 1m 10m 100m
D=0.2 D=0.1 Single Pulse D=0.05 D=0.5
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
T amb=25°C
100
Single Pulse T amb=25°C
10
1
10
100
1k
1 100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
DMN6066SSS
Document Number DS32110 Rev 1 - 2
3 of 8 www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated www.DataSheet4U.com
DMN6066SSS
ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 7) Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9)
Notes:
Symbol BVDSS IDSS I.