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BUK9C07-65BIT
N-channel TrenchPLUS logic level FET
Rev. 02 — 17 June 2010 Product data sheet
1. Pr...
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BUK9C07-65BIT
N-channel TrenchPLUS logic level FET
Rev. 02 — 17 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power
transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing
transistor and over temperature protection diodes.
1.2 Features and benefits
AEC-Q101 compliant Low conduction losses due to low on-state resistance
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Tj = 25 °C; VGS = 5 V; see Figure 14 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 6 Max Unit 7 mΩ
Static characteristics
ID/Isense V(BR)DSS
1086 1206 1327 A/A 1 8 5 65 V
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NXP Semiconductors
BUK9C07-65BIT
N-channel TrenchPLUS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 mb Pinning information Symbol Description G IS A D K KS S D gate current sense anode drain cathode Kelvin source source mb
4 123 567 G IS S KS C
003aad829
Simplified outline
mb
Graphic symbol
D A
SOT427 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK9C07-65BIT D2PAK Descripti...