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BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
Rev. 01 — 3 June 2010 Objective data sheet
1. P...
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BLF7G20L-200; BLF7G20LS-200
Power LDMOS
transistor
Rev. 01 — 3 June 2010 Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1805 to 1880
IDq (mA) 1620
VDS (V) 28
PL(AV) (W) 55
Gp (dB) 18
ηD (%) 33
ACPR (dBc) −29[1]
Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi-carrier applications in the 1805 MHz to 1990 MHz frequency range
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NXP Semiconductors
BLF7G20L-200; BLF7G20LS-200
Power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF7G20L-200 (SOT502A)
1 3 2 2 3
sym1...