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PSMN3R8-30LL Dataheets PDF



Part Number PSMN3R8-30LL
Manufacturers NXP
Logo NXP
Description N-channel QFN3333 30V 3.8mOhm logic level MOSFET
Datasheet PSMN3R8-30LL DatasheetPSMN3R8-30LL Datasheet (PDF)

www.DataSheet4U.com PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET Rev. 02 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Small footprint for compact designs „ Suitable fo.

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www.DataSheet4U.com PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET Rev. 02 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Small footprint for compact designs „ Suitable for logic level gate drive sources 1.3 Applications „ Battery protection „ DC-to-DC converters „ Load switching „ Power ORing 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; see Figure 1 Min -55 Typ 4.5 3 Max Unit 30 40 69 150 5.8 5.1 3.8 V A W °C mΩ mΩ mΩ Static characteristics www.DataSheet4U.com NXP Semiconductors PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ 5.3 38 18 Max Unit nC nC nC Table 1. Symbol QGD QG(tot) Dynamic characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 40 A; Vsup ≤ 30 V; unclamped; RGS = 50 Ω 109 mJ 2. Pinning information Table 2. Pin 1 2 3 4 5,6,7,8 Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline 8 7 6 5 Graphic symbol D G S 1 2 3 4 Transparent top view SOT873-1 (QFN3333) 3. Ordering information Table 3. Ordering information Package Name PSMN3R8-30LL QFN3333 Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals Version SOT873-1 Type number PSMN3R8-30LL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 02 — 22 June 2010 2 of 15 www.DataSheet4U.com NXP Semiconductors PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 40 A; Vsup ≤ 30 V; unclamped; RGS = 50 Ω VGS = 10 V; Tmb = 100 °C; see Figure 2 VGS = 10 V; Tmb = 25 °C; see Figure 2 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 1 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tj ≤ 150 °C; Tj ≥ 25 °C; RGS = 20 kΩ Min -20 -55 -55 Typ Max 30 30 20 40 40 413 69 150 150 260 Unit V V V A A A W °C °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode IS ISM EDS(AL)S 40 413 109 A A mJ Avalanche ruggedness 120 Pder (%) 80 003aab937 40 0 0 50 100 150 Tmb (°C) 200 Fig 1. Normalized total power dissipation as a function of solder point temperature PSMN3R8-30LL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 02 — 22 June 2010 3 of 15 www.DataSheet4U.com NXP Semiconductors PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET 120 ID (A) 100 003aae270 80 60 40 (1) 20 0 0 50 100 150 200 Tmb (°C) Fig 2. 103 ID (A) 102 Continuous drain current as a function of mounting base temperature 003a a e 271 Limit RDSon = VDS / ID tp = 10 μs 100 μs 10 DC 1 1 ms 10 ms 100 ms 10−1 10−2 10−1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R8-30LL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 02 — 22 June 2010 4 of 15 www.DataSheet4U.com NXP Semiconductors PSMN3R8-30LL N-channel QFN3333 30 V 3.8 mΩ logic level MOSFET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 [1] Min - Typ 1 53 Max 1.3 60 Unit K/W K/W [1] Rth(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient temperature. In practice Rth(j-a) will be determined by t.


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