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BUK7535-100A; BUK7635-100A
TrenchMOS™ standard level FET
Rev. 01 — 02 February 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
3. Applications
c c
s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) mounting base; connected to drain (d)
mb d
g s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Philips Semiconductors
BUK7535-100A; BUK7635-100A
www.DataSheet4U.com
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 35 88 Typ − − − − Max 100 41 149 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
mΩ mΩ
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 25 A; VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min − − − − − − − −55 −55 − − − Max 100 100 ±20 41 29 165 149 +175 +175 41 165 110 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 07829
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 02 February 2001
2 of 15
Philips Semiconductors
BUK7535-100A; BUK7635-100A
www.DataSheet4U.com
TrenchMOS™ standard level FET
03aa24
120
Pder (%) 100
03na19
120
Ider (%)
100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 200 Tmb (oC)
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
VGS ≥ 4.5 V ID I der = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103
ID (A)
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03nd36
102
RDSon = VDS/ ID tp = 10 us 100 us
10
P
δ=
tp T
1 ms D.C. 10 ms 100 ms 10
tp T
t
1 1
102
VDS (V)
103
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07829
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 02 February 2001
3 of 15
Philips Semiconductors
BUK7535-100A; BUK7635-100A
www.DataSheet4U.com
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT78 package mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Value 60 50 Unit K/W K/W
1.0
K/W
7.1 Transient thermal impedance
10 Zth(j-mb) (K/W) 1 δ = 0.5
0.2
03nd37
10-1
0.1
0.05
0.02
P
δ=
tp T
10-2
Single Shot
tp
t T
10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07829
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 02 February 2001
4 of 15
Philips Semiconductors
BUK7535-100A; BUK7635-100A
www.DataSheet4U.com
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld input capacitance output capacitance .