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BUK7535-100A; BUK7635-100A
TrenchMOS™ standard level FET
Rev. 01 — 02 February 2001 Product specific...
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BUK7535-100A; BUK7635-100A
TrenchMOS™ standard level FET
Rev. 01 — 02 February 2001 Product specification
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
3. Applications
c c
s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) mounting base; connected to drain (d)
mb d
g s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Philips Semiconductors
BUK7535-100A; BUK7635-100A
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TrenchMOS™ standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 35 88 Typ − − − − Max 100 41 149 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
mΩ mΩ
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Par...