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BUK7635-100A Dataheets PDF



Part Number BUK7635-100A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description TrenchMOS standard level FET
Datasheet BUK7635-100A DatasheetBUK7635-100A Datasheet (PDF)

www.DataSheet4U.com BUK7535-100A; BUK7635-100A TrenchMOS™ standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications c c s Au.

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www.DataSheet4U.com BUK7535-100A; BUK7635-100A TrenchMOS™ standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) Philips Semiconductors BUK7535-100A; BUK7635-100A www.DataSheet4U.com TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 35 88 Typ − − − − Max 100 41 149 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 25 A; VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min − − − − − − − −55 −55 − − − Max 100 100 ±20 41 29 165 149 +175 +175 41 165 110 Unit V V V A A A W °C °C A A mJ Source-drain diode Avalanche ruggedness 9397 750 07829 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 02 February 2001 2 of 15 Philips Semiconductors BUK7535-100A; BUK7635-100A www.DataSheet4U.com TrenchMOS™ standard level FET 03aa24 120 Pder (%) 100 03na19 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) 0 0 25 50 75 100 125 150 175 200 Tmb (oC) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 4.5 V ID I der = ------------------ × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. 103 ID (A) Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03nd36 102 RDSon = VDS/ ID tp = 10 us 100 us 10 P δ= tp T 1 ms D.C. 10 ms 100 ms 10 tp T t 1 1 102 VDS (V) 103 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07829 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 02 February 2001 3 of 15 Philips Semiconductors BUK7535-100A; BUK7635-100A www.DataSheet4U.com TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT78 package mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Value 60 50 Unit K/W K/W 1.0 K/W 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 03nd37 10-1 0.1 0.05 0.02 P δ= tp T 10-2 Single Shot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 07829 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 02 February 2001 4 of 15 Philips Semiconductors BUK7535-100A; BUK7635-100A www.DataSheet4U.com TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld input capacitance output capacitance .


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