BUK7635-100A

www.DataSheet4U.com BUK7535-100A; BUK7635-100A TrenchMOS™ standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) Philips Semiconductors BUK7535-100A; BUK7635-100A www.DataSheet4U.com TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 35 88 Typ − − − − Max 100 41 149 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Par...