BUK763R1-40B

www.DataSheet4U.com BUK75/763R1-40B TrenchMOS™ standard level FET Rev. 02 — 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.6 J s ID ≤ 75 A s RDSon = 2.6 mΩ (typ) s Ptot ≤ 300 W 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 Simplified outline mb mb Symbol d [1] g s MBB076 2 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors BUK75/763R1-40B www.DataSheet4U.com TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak...