www.DataSheet4U.com
BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010 Product data sheet
1. P...
www.DataSheet4U.com
BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications
www.DataSheet4U.com
NXP Semiconductors
BUK763R6-40C
N-channel TrenchMOS standard level FET
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 40 100 203 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 3 3.6 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive ID = 100 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V...