BUK9506-55A

www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) mb mb mb Simplified outline Symbol drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 d g 2 MBB076 s 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) SOT226 (I2-PAK) Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.DataSheet4U.com 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ − − − − 5.3 5.5 4.8 Max 55 154 300 175 6.3 6.7 5.8 Unit V A W °C mΩ mΩ mΩ 6. Lim...