KU048N03D

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU048N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max.) @ VGS=10V : RDS(ON)=6.5m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 84 A 336 124 60 W 3.8 150 -55 150 2.1 40 /W /W mJ Type Name Lot No UNIT V V DPAK (1) Marking DC@TC=25 Pulsed (Note1) (Note2) (Note3) (Note1) (Note2) ID IDP EAS PD Tj Tstg Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient KU048N03 D (Note1) (Note2) RthJC RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. Note 3) L=18 H, IAS=84A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G ...