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Part Number KU048N03D
Manufacturers KEC semiconductor
Logo KEC semiconductor
Description N-Ch Trench MOSFET
Datasheet KU048N03D DatasheetKU048N03D Datasheet (PDF)

  KU048N03D   KU048N03D
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU048N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max.) @ VGS=10V : RDS(ON)=6.5m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 84 A 336 124 60 W 3.8 150 -55 150 2.1 40 /W /W mJ Type Name Lot No UNIT V V DPAK (1) Marking DC@TC=25 Pulsed (Note1) (Note2) (Note3).



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