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Part Number KU068N03D
Manufacturers KEC semiconductor
Logo KEC semiconductor
Description N-Ch Trench MOSFET
Datasheet KU068N03D DatasheetKU068N03D Datasheet (PDF)

  KU068N03D   KU068N03D
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU068N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES ¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max.) @ VGS=10V : RDS(ON)=13.2m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS ¡ 30 20 68 A 272 89 45 W 3.8 150 ¡ ¡ ¡ ¡ /W /W -55¡› 150 mJ Type Name Lot No UNIT V V DPAK (1) Marking DC@TC=25¡ Pulsed (Note1) (N.



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