Part Number |
KU068N03D |
Manufacturers |
KEC semiconductor |
Logo |
|
Description |
N-Ch Trench MOSFET |
Datasheet |
KU068N03D Datasheet (PDF) |
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.
KU068N03D
www.DataSheet4U.com
N-Ch Trench MOSFET
A C
K D
L
FEATURES
¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max.) @ VGS=10V : RDS(ON)=13.2m (Max.) @ VGS=4.5V
1 2 3
B
H G F F
J
E N M
DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Ta=25¡
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current
Unless otherwise Noted)
SYMBOL RATING VDSS VGSS ¡ 30 20 68 A 272 89 45 W 3.8 150 ¡ ¡ ¡ ¡ /W /W -55¡› 150 mJ
Type Name Lot No
UNIT V V
DPAK (1)
Marking
DC@TC=25¡ Pulsed
(Note1) (N.