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STL75N3LLZH5

ST Microelectronics

Power MOSFETs

www.DataSheet4U.com STL75N3LLZH5 N-channel 30 V, 0.0055 Ω , 19 A PowerFLAT™ (5x6) STripFET™ V Power MOSFET Preliminary ...


ST Microelectronics

STL75N3LLZH5

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www.DataSheet4U.com STL75N3LLZH5 N-channel 30 V, 0.0055 Ω , 19 A PowerFLAT™ (5x6) STripFET™ V Power MOSFET Preliminary data Features Type STL75N3LLZH5 VDSS 30 V RDS(on) max <0.0061 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Built in G-S Zener diodes Figure 1. Internal schematic diagram PowerFLAT™ ( 5x6 ) Application ■ Switching applications Description The STL75N3LLZH5 is an N-channel STripFET™V Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Marking 75N3LLZH5 Package PowerFLAT™ (5x6) Packaging Tape and reel Order code STL75N3LLZH5 June 2010 Doc ID 17661 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Electrical ratings STL75N3LLZH5 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID (1) ID(2) ID (2) (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Total dissipation at TC = 25°C D...




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