90N20DPBF Datasheet | IRFP90N20DPBF





90N20DPBF PDF File (Datasheet) Download

Part Number 90N20DPBF
Description IRFP90N20DPBF
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download 90N20DPBF PDF File

Features: www.DataSheet4U.com PD - 95664 SMPS MO SFET IRFP90N20DPbF HEXFET® Power MOSF ET Applications High frequency DC-DC co nverters l Lead-Free l VDSS 200V RDS( on) max 0.023Ω ID 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switchi ng Losses l Fully Characterized Capacit ance Including Effective COSS to Simpli fy Design, (See App. Note AN1001) l Ful ly Characterized Avalanche Voltage and Current l TO-247AC Absolute Maximum R atings Parameter ID @ TC = 25°C ID @ T C = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 1 0V Pulsed Drain Current  Power Dissip ation Linear Derating Factor Gate-to-So urce Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Tempe rature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 94o 66 380 580 3.8 ± 30 6. 7 -55 to + 175 300 (1.6mm from case ) 1 0 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-.

Keywords: 90N20DPBF, datasheet, pdf, International Rectifier, IRFP90N20DPBF, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

www.DataSheet4U.com
SMPS MOSFET
PD - 95664
IRFP90N20DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
0.023
ID
94Ao
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
94o
66
380
580
3.8
± 30
6.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
Notes  through o are on page 8
www.irf.com
1
7/30/04

                    
  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)