2SK4021

www.DataSheet4U.com 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 6.5 ± 0.2 5.2 ± 0.2 1.5 ± 0.2 Unit: mm 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance: |Yfs| = 4.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 1.6 0.9 4.1 ± 0.2 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.5 18 20 51 4.5 2.0 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 0.8 MAX. 1.1 MAX. 1 2.3 2.3 2 3 0.6 ± 0.15 0.6 ± 0.15 2 1 Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 2.3 ± 0.2 5.7 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) Weight: 0.36 g (typ.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the ...