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2SK4022
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4022
Switching Re...
www.DataSheet4U.com
2SK4022
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4022
Switching
Regulator, DC/DC Converter and Motor Drive Applications
6.5±0.2 5.2±0.2 1.5±0.2
Unit: mm
0.6 MAX.
4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
1.6
5.5±0.2
0.9 4.1±0.2 5.7
1.1±0.2
0.6 MAX
2.3
2.3 2.3±0.2 0.6±0.15 0.6±0.15
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 3 6 20 36.2 3 2 150 −55~150 A W mJ A mJ °C °C Unit V V V
0.8 MAX. 1.1 MAX.
1
2
3
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-7J2B
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabilit...