2SK4014

www.DataSheet4U.com 2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Applications z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.6 Ω (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 6 18 45 972 6 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliab...