2SK4016

www.DataSheet4U.com 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4016 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.0 150 −55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 1 2005-05-30 www.DataSheet4U.com 2SK4016 Electrical Characteristics (Ta =...