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2SK4018
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2
−π−MOS V)
2SK4018
Chopp...
www.DataSheet4U.com
2SK4018
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (L
2
−π−MOS V)
2SK4018
Chopper
Regulator, DC/DC Converter and Motor Drive Applications
6.5±0.2 5.2±0.2 1.5±0.2
Unit: mm
0.6 MAX.
1.6
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode
: RDS (ON) = 0.28 Ω (typ.) : |Yfs| = 3.5 S (typ.)
0.9
5.5±0.2
z 4 V gate drive
1.1±0.2
4.1±0.2
: IDSS = 100 μA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
1 2.3 2.3
5.7
0.6 MAX
Absolute Maximum Ratings (Ta = 25°C)
0.8 MAX.
2
3
0.6±0.15 0.6±0.15
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 100 100 ±20 3 12 20 140 3 2 150 −55~150
Unit V V V A A W mJ A mJ °C °C
1.1 MAX.
2.3±0.2
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-7B1B
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropri...