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2SK4018

Toshiba Semiconductor

N-Channel MOSFET

www.DataSheet4U.com 2SK4018 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 −π−MOS V) 2SK4018 Chopp...


Toshiba Semiconductor

2SK4018

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www.DataSheet4U.com 2SK4018 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 −π−MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 5.2±0.2 1.5±0.2 Unit: mm 0.6 MAX. 1.6 z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.28 Ω (typ.) : |Yfs| = 3.5 S (typ.) 0.9 5.5±0.2 z 4 V gate drive 1.1±0.2 4.1±0.2 : IDSS = 100 μA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) 1 2.3 2.3 5.7 0.6 MAX Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. 2 3 0.6±0.15 0.6±0.15 Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 3 12 20 140 3 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1.1 MAX. 2.3±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7B1B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropri...




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