TPC8A02-H www.DataSheet4U.com
ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS...
TPC8A02-H www.DataSheet4U.com
ＴOSHIBA Field Effect
Transistor with Built-in
Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)
TPC8A02-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Built-in
schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) High-speed switching. Small gate charge.: QSW ＝ 11 nC(Typ.) Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 16 48 1.9 1.0 166 16 0.11 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C
1,2,3 4 5,6,7,8 JEDEC JEITA TOSHIBA
SOURCE，ANODE GATE DRAIN，CATHODE ― ― 2-6J1B
Weight: 0.085 g (typ.)
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Circuit Configuration
8 7 6 5
1
2
3
4
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the...
