TPC8115 www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8115
Lithium Ion B...
TPC8115 www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8115
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −20 −20 ±8 −10 −40 1.9 1.0 26 −10 0.19 150 −55 to 150 Unit V V V A W
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Weight: 0.080 g (typ.)
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Circuit Configuration
W mJ A mJ °C °C
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu...