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TPC8119 Dataheets PDF



Part Number TPC8119
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description P-Channel MOSFET
Datasheet TPC8119 DatasheetTPC8119 Datasheet (PDF)

www.DataSheet4U.com TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Ma.

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www.DataSheet4U.com TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.9 1.0 67 −10 0.030 150 −55 to 150 Unit V V V A JEDEC JEITA TOSHIBA ⎯ ⎯ 2-6J1B Weight: 0.080 g (typ.) Drain power dissipation Drain power dissipation W W mJ A mJ °C °C Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with care. 1 2009-09-29 www.DataSheet4U.com TPC8119 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) (Note 2b) Thermal resistance, channel to ambient Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W Marking (Note 5) TPC8119 Part No. (or abbreviation code) Lot No. Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −10 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 www.DataSheet4U.com TPC8119 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS −10 V 4.7 Ω 0V VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±20 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −5 A VGS = −10 V, ID = −5 A VDS = −10 V, ID = −5 A Min ⎯ ⎯ −30 −13 −0.8 ⎯ ⎯ 12 ⎯ ⎯ ⎯ ⎯ I D = −5 A VOUT RL = 3.0 Ω ⎯ ⎯ ⎯ ⎯ VDD ≈ −24 V, VGS = −10 V, ID = −10 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 20 10 24 1560 370 475 8 16 55 145 40 5 13 Max ±100 −10 ⎯ ⎯ −2.0 28 13 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit nA μA V V mΩ S VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −10 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −40 1.2 Unit A V 3 2009-09-29 www.DataSheet4U.com TPC8119 ID – VDS −10 −6 −8 −8 −10 −4 −6 −2.7 −4 VGS = −2.5V Common source Ta = 25°C Pulse test −0.1 −0.2 −0.3 −0.4 −0.5 −3.7 −5 −3.3 −3.5 −3 −40 −6 −8 −5 ID – VDS −4 −3.7 −3.5 (A) (A) −30 −10 ID Drain current Drain current ID −3.3 −20 −3 −10 −2 VGS = −2.7V Common so.


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