TPCA8009-H

TPCA8009-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8009-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A 5.0±0.2 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| = 4.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 1 0.95±0.05 4 0.595 A 5.0±0.2 S 1 4 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 150 150 ±20 7 14 45 2.8 Unit 8 V V V A W W 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN 5 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.068 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 34 7 1.5 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.6±0.1 1.1±0.2 0.05 S 0.166±0.05 4 N...