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TPCA8011-H Dataheets PDF



Part Number TPCA8011-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TPCA8011-H DatasheetTPCA8011-H Datasheet (PDF)

TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm 0.5±0.1 1.27 0.4±0.1 8 5 0.05 M A 6.0±0.3 5.0±0.2 • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • High forward transfer admittance: |Yfs| =120 S (t.

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TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm 0.5±0.1 1.27 0.4±0.1 8 5 0.05 M A 6.0±0.3 5.0±0.2 • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • High forward transfer admittance: |Yfs| =120 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA) 0.15±0.05 0.95±0.05 1 4 5.0±0.2 0.595 A 0.166±0.05 S 0.05 S 1 4 1.1±0.2 0.6±0.1 3.5±0.2 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit 20 V 20 V ±12 V 40 A 120 45 W 2.8 W 1.6 W 208 mJ 40 A 2.0 mJ 150 °C −55 to 150 °C 8 5 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC JEITA TOSHIBA ― ― 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8765 1234 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 Thermal Characteristics Characteristic Symbol Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-c) Rth (ch-a) Rth (ch-a) Max 2.78 44.6 78.1 Unit °C/W °C/W °C/W Marking (Note 5) TPCA 8011-H * Type Lot No. TPCA8011-H Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2 2006-11-16 TPCA8011-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS V (BR) DSX ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V 20 ⎯ ⎯ V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 μA 0.6 ⎯ 1.3 V RDS (ON) VGS = 2.5 V, ID = 20 A VGS = 4.5 V, ID = 20 A ⎯ 4.7 7.5 mΩ ⎯ 2.7 3.5 |Yfs| VDS = 10 V, ID = 20 A 60 120 ⎯ S Ciss ⎯ 2900 ⎯ Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 430 ⎯ pF Coss ⎯ 1300 ⎯ tr VGS 5 V ton 0V tf ⎯ 13 ⎯ ID = 20A VOUT ⎯ 24 ⎯ ns ⎯ 22 ⎯ 4.7 Ω RL = 0.5Ω VDD ∼− 10 V toff Duty <= 1%, tw = 10 μs ⎯ 61 ⎯ Qg VDD ∼− 16 V, VGS = 5 V, ID = 40 A ⎯ 32 ⎯ Qgs1 Qgd QSW VDD ∼− 16 V, VGS = 5 V, ID = 40 A ⎯ 7.7 ⎯ nC ⎯ 11 ⎯ ⎯ 16 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol IDRP VDSF Test Condition ⎯ IDR = 40 A, VGS = 0 V Min Typ. Max Unit ⎯ ⎯ 120 A ⎯ ⎯ −1.2 V 3 2006-11-16 Drain current ID (A) 50 10 8 40 6 5 4.5 30 4 ID – VDS 3 2.5 2.3 2.2 3.5 Common source Ta = 25°C Pulse test 2.1 2 20 1.9 10 VGS = 1.7 V 0 .


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