Document
TPCA8011-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8011-H
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Unit: mm
0.5±0.1 1.27 0.4±0.1
8
5
0.05 M A
6.0±0.3 5.0±0.2
• Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • High forward transfer admittance: |Yfs| =120 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA)
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0.6±0.1 3.5±0.2
4.25±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
20
V
20
V
±12
V
40 A
120
45
W
2.8
W
1.6
W
208
mJ
40
A
2.0
mJ
150
°C
−55 to 150
°C
8
5 0.8±0.1
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to case
(Tc=25℃)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-c) Rth (ch-a) Rth (ch-a)
Max 2.78 44.6 78.1
Unit °C/W °C/W °C/W
Marking (Note 5)
TPCA 8011-H
*
Type Lot No.
TPCA8011-H
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
FR-4 25.4 × 25.4 × 0.8
(Unit: mm)
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TPCA8011-H
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS V (BR) DSX
ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V
20
⎯
⎯
V
8
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.6
⎯
1.3
V
RDS (ON)
VGS = 2.5 V, ID = 20 A VGS = 4.5 V, ID = 20 A
⎯
4.7
7.5
mΩ
⎯
2.7
3.5
|Yfs|
VDS = 10 V, ID = 20 A
60
120
⎯
S
Ciss
⎯ 2900 ⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
430
⎯
pF
Coss
⎯ 1300 ⎯
tr
VGS 5 V
ton
0V
tf
⎯
13
⎯
ID = 20A
VOUT
⎯
24
⎯
ns
⎯
22
⎯
4.7 Ω RL = 0.5Ω
VDD ∼− 10 V
toff
Duty <= 1%, tw = 10 μs
⎯
61
⎯
Qg
VDD ∼− 16 V, VGS = 5 V, ID = 40 A
⎯
32
⎯
Qgs1 Qgd QSW
VDD ∼− 16 V, VGS = 5 V, ID = 40 A
⎯
7.7
⎯
nC
⎯
11
⎯
⎯
16
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Drain reverse current Pulse (Note 1) Forward voltage (diode)
Symbol
IDRP VDSF
Test Condition ⎯
IDR = 40 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
120
A
⎯
⎯
−1.2
V
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Drain current ID (A)
50 10 8
40 6 5
4.5 30 4
ID – VDS
3 2.5 2.3
2.2 3.5
Common source Ta = 25°C Pulse test
2.1
2
20
1.9
10 VGS = 1.7 V
0
.