TPCA8020-H

TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge: QSW = 3.5 nC (typ.) Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance: |Yfs| = 15 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.5±0.1 1.27 0.4±0.1 8 5 Unit: mm 0.05 M A 6.0±0.3 5.0±0.2 0.15±0.05 0.95±0.05 1 4 5.0±0.2 0.595 A 0.166±0.05 S 0.05 S 1 4 1.1±0.2 0.6±0.1 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristic Symbol Rating Unit 8 5 0.8±0.1 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation (Tc=25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg 40 V 40 V ±20 V 7.5 A 30 30 W 2.8 W 1.6 W 26 mJ 7.5 A 1.9 mJ 150 °C −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 1,2,3：SOUR...