TPCA8021-H

TPCA8021-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 0.4±0.1 5 Unit: mm 0.05 M A Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.9nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) High forward transfer admittance: |Yfs| =46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 30 30 ±20 27 81 45 2.8 Unit V V V A W W 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.068 g (typ.) 1.6 W Circuit Configuration 8 7 6 5 95 27 2.7 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Maximum Ratings (Ta = 25°C) 4 Note: For ...