TPCA8022-H

TPCA8022-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8022-H 0.5±0.1 Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A 5.0±0.2 Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance : RDS (ON) = 17 mΩ (typ.) (VGS=10V, ID=11A) 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.05 S S 1 0.6±0.1 4 1.1±0.2 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 100 100 ±20 22 66 45 2.8 Unit V V V A W W 1,2,3：SOURCE 5,6,7,8：DRAIN 8 5 0.8±0.1 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation Circuit Configuration 1.6 W 8 197 22 3.8 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the...