TPCA8028-H

TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A 6 .0 ± 0 .3 5 .0 ± 0 .2 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 20 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 166 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 0.95±0.05 1 4 5 .0 ± 0 .2 0.595 A 0.166±0.05 S 0.05 S 1 4 1.1±0.2 0 .6 ± 0 .1 3 .5 ± 0 .2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg 30 V 30 V ±20 V 50 A 150 45 W 2.8 W 1.6 W 325 mJ 50 A 4.03 mJ 150 °C −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 4.25±0.2 8 5 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHI...