Document
TPCA8104
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8104
High-Side Switching Applications Portable Equipment Applications
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance:|Yfs| = 50 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
0.5±0.1 1.27 8
0.4±0.1 5
Unit: mm
0.05 M A
6 .0 ± 0 .3 5 .0 ± 0 .2
0.15±0.05
0.95±0.05
1
4
5 .0 ± 0 .2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0 .6 ± 0 .1 3 .5 ± 0 .2
Absolute Maximum Ratings (Ta = 25°C)
4.25±0.2
Characteristic
Symbol
Rating
Unit
8
5 0.8±0.1
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
DC Drain current
Pulse
(Note 1) (Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation (t = 10 s) (Note 2a)
Drain power dissipation (t = 10 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Tc = 25°C) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Note: For Notes 1 to 4, see the next page.
-60
V
-60
V
±20
V
-40 A
-120
45
2.8
W
1.6
116
mJ
-40
A
4.5
mJ
150
°C
−55 to 150
°C
1, 2, 3: Source 5, 6, 7, 8: Drain
4: Gate
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-05
Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to case (Tc = 25°C)
Thermal resistance, channel to ambient (t = 10 s) (Note 2a)
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-c) Rth (ch-a) Rth (ch-a)
Max 2.78 44.6 78.1
Unit °C/W
°C/W
Marking (Note 5)
TPCA 8104
※
Type Lot No.
TPCA8104
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8
(Unit: mm)
FR-4 25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = -40 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: * Weekly code (three digits):
Week of manufacture (01 for the first week of the year, con.