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TPCA8104 Dataheets PDF



Part Number TPCA8104
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet TPCA8104 DatasheetTPCA8104 Datasheet (PDF)

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance:|Yfs| = 50 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A 6 .0 ± 0 .3 5.

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TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance:|Yfs| = 50 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A 6 .0 ± 0 .3 5 .0 ± 0 .2 0.15±0.05 0.95±0.05 1 4 5 .0 ± 0 .2 0.595 A 0.166±0.05 S 0.05 S 1 4 1.1±0.2 0 .6 ± 0 .1 3 .5 ± 0 .2 Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristic Symbol Rating Unit 8 5 0.8±0.1 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Note: For Notes 1 to 4, see the next page. -60 V -60 V ±20 V -40 A -120 45 2.8 W 1.6 116 mJ -40 A 4.5 mJ 150 °C −55 to 150 °C 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-01-05 Thermal Characteristics Characteristic Symbol Thermal resistance, channel to case (Tc = 25°C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-c) Rth (ch-a) Rth (ch-a) Max 2.78 44.6 78.1 Unit °C/W °C/W Marking (Note 5) TPCA 8104 ※ Type Lot No. TPCA8104 Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = -40 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: * Weekly code (three digits): Week of manufacture (01 for the first week of the year, con.


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