PBSS9110Z

PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 11 December 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −1 A; IB = −100 mA [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 170 Max −100 −1 −3 320 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. NXP Semiconductors PBSS9110Z w w w . D a t a S h e e t 4 U . c 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym028 Simplified outline 4 Symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package N...