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IRF6718L2TR1PBF Dataheets PDF



Part Number IRF6718L2TR1PBF
Manufacturers International Rectifier
Logo International Rectifier
Description DirectFET Power MOSFET
Datasheet IRF6718L2TR1PBF DatasheetIRF6718L2TR1PBF Datasheet (PDF)

PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide  l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques  IRF6718L2TR1PbF DirectFET® Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 2.

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PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide  l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques  IRF6718L2TR1PbF DirectFET® Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 20nC 9.4nC 67nC 50nC 1.9V Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 L6 DirectFET® ISOMETRIC L4 L6 L8 Description The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, .


IRF6718L2TRPBF IRF6718L2TR1PBF LAN9512


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