DirectFET Power MOSFET
PD - 97395E
IRF6718L2TRPbF
l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra...
Description
PD - 97395E
IRF6718L2TRPbF
l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra Low Package Inductance
l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications
l Compatible with existing Surface Mount Techniques
IRF6718L2TR1PbF
DirectFET® Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
64nC 20nC 9.4nC 67nC 50nC 1.9V
Applicable DirectFET Outline and Substrate Outline
S1 S2 SB
M2
M4
L6 DirectFET® ISOMETRIC L4 L6 L8
Description
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, ...
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