SSM3K315T

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.0 A Pulse IDP (Note 1) 12.0 Drain power dissipation PD (Note 1) 700 mW t = 10 s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) 2.9±0.2 1.9±0.2 0.95 0.95 １ ２ ３ 0.7±0.05 TSM 1: Gate 2: Source 3: Drain JEDEC ― ...