SSM5G09TU

SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1. Applications DC-DC Converters 2. Features (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current Drain current (pulsed) Power dissipation Power dissipation (t = 10 s) (Note 1) (Note 2) (Note 2) VDSS VGSS ID IDP PD -12 V ±8 -1.5 A -6.0 0.5 W 0.8 Channel temperature Tch 150  Note 1: The pulse width limited by maximum channel temperature. Note 2: PD for the entire IC Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) ©2017 Toshiba Corporation 1 Start of commercial production 2003-09 2017-02-21 Rev.1.0 SSM5G09TU 4.2. Absolute Maximum Ratings of the Schottky Barrier Diode (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage Reverse voltage Average rectified current Non-repetitive peak forward surge current Junction temperature (f = 50 Hz) Symbol Rating Unit VRM VR IO IFSM Tj 15 V 12 0.5 A 2 125  4.3. Absolute Maximum Rat...